IAUCN10S7N074ATMA1 vs IAUCN04S7L050HATMA1 Comparación
Comparación detallada lado a lado de IAUCN10S7N074ATMA1 por Infineon y IAUCN04S7L050HATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 ✓ ActivoInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN10S7N074ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,83 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | — |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | — |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 (with exposed pad) | — |
| Nivel MSL | MSL2 (1 year) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Application | 48 V Automotive Systems | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |