IAUCN10S7N074ATMA1 vs IAUCN04S7L050HATMA1 비교
다음의 상세 나란히 비교: IAUCN10S7N074ATMA1 제조: Infineon 및 IAUCN04S7L050HATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUCN10S7N074ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.62 | $0.83 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | — |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | — |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| 동작 온도 범위 | -55 °C to +175 °C | — |
| 패키지 | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 8 (with exposed pad) | — |
| MSL 레벨 | MSL2 (1 year) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Application | 48 V Automotive Systems | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 동작 접합 온도 | — | -55 °C to +175 °C |