IAUT300N08S5N014ATMA1 vs ISC015N06NM5ATMA1 Comparación
Comparación detallada lado a lado de IAUT300N08S5N014ATMA1 por Infineon y ISC015N06NM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUT300N08S5N014ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,05 | $0,62 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 300 A (DC) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) Max | ±20 V (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation PD @ TC=25°C | 300 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Tipo de montaje | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) | 1 |
| Peak Reflow Temperature | 260 °C | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per Infineon datasheet) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Technology Family | OptiMOS 5 (Infineon) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| Estado RoHS | — | Compliant |