IAUT300N08S5N014ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N014ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N014ATMA1
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 β Active
Specification Comparison
| Parameter | IAUT300N08S5N014ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $0.62 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 300 A (DC) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) Max | Β±20 V (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation PD @ TC=25Β°C | 300 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at β€30 Β°C / 85 % RH) | 1 |
| Peak Reflow Temperature | 260 Β°C | β |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100 % (per Infineon datasheet) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Technology Family | OptiMOS 5 (Infineon) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Operating Temperature Range | β | -55 C to +175 C |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| RoHS Status | β | Compliant |