IAUTN12S5N017ATMA1 vs IAUC120N04S6N010ATMA1 Comparación
Comparación detallada lado a lado de IAUTN12S5N017ATMA1 por Infineon y IAUC120N04S6N010ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ ActivoInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUTN12S5N017ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,83 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | — |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | — |
| Maximum Junction Temperature | 175 °C | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (junction) | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Encapsulado | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-34 (5x6 mm leadless) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | — |
| Estado RoHS | Compliant (per distributor listings) | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020, by package) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |