IAUTN12S5N017ATMA1 vs IAUC120N04S6N010ATMA1 비교

다음의 상세 나란히 비교: IAUTN12S5N017ATMA1 제조: Infineon 및 IAUC120N04S6N010ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 활성

사양 비교

파라미터 IAUTN12S5N017ATMA1 IAUC120N04S6N010ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $4.83 $0.68
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
FET Type N-Channel N-Channel
Drain-Source Voltage (V<sub>DS</sub>) 120 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 314 A —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 1.7 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.5 V typical (range per datasheet) —
Gate Charge (Q<sub>g</sub>) per datasheet curve (typ. ~150 nC class) —
Maximum Junction Temperature 175 °C —
동작 온도 범위 -55 °C to +175 °C (junction) -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
패키지 PG-HSOF-8-1 (HSOF-8, surface mount) PG-TDSON-8-34 (5x6 mm leadless)
실장 유형 Surface Mount Surface Mount
Mounting Position Kelvin source pin (pin 2) for high-frequency layouts —
Technology OptiMOS 5 trench MOSFET OptiMOS 6
Qualification Automotive grade (per Infineon part page, AEC-Q101 expected for the family) —
RoHS 상태 Compliant (per distributor listings) Compliant
MSL 레벨 1 (per JEDEC J-STD-020, by package) 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Automotive Qualification — AEC-Q101
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

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