IAUZ40N06S5N050ATMA1 vs BSC034N06NSATMA1 Comparación
Comparación detallada lado a lado de IAUZ40N06S5N050ATMA1 por Infineon y BSC034N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IAUZ40N06S5N050ATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $0,65 |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 |
| Channel Type | N-Channel Enhancement Mode | — |
| Encapsulado | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Recuento de pines | 8 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +150C |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |