IAUZ40N06S5N050ATMA1 vs BSC034N06NSATMA1 对比

详细并排对比 IAUZ40N06S5N050ATMA1 出自 Infineon 和 BSC034N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ 量产中
Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ 量产中

规格对比

参数 IAUZ40N06S5N050ATMA1 BSC034N06NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.65
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, TC) 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-State Resistance (RDS(on), typ) 5 mΩ at VGS=10 V —
Maximum Power Dissipation (PD) 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th), typ) 1.7 V —
Technology OptiMOS 5 (Trench) OptiMOS 5
Channel Type N-Channel Enhancement Mode —
封装 PG-TSDSON-8-33 (3.3 x 3.3 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
引脚数量 8 —
安装类型 Surface Mount Surface Mount
Thermal Resistance (RthJC, max) [DATA_NEEDED: RthJC] —
工作温度范围 -55C to +175C -55C to +150C
Automotive Qualification AEC-Q101 Qualified —
RoHS 状态 Compliant Compliant
MSL 等级 1 [DATA_NEEDED: MSL level]
Packaging Tape & Reel —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W

数据手册与资源

浏览全部产品 创建 BOM 获取报价