IGD08N120S7ATMA1 vs IGW40N120H3FKSA1 Comparación
Comparación detallada lado a lado de IGD08N120S7ATMA1 por Infineon y IGW40N120H3FKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IGD08N120S7ATMA1 | IGW40N120H3FKSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | IGBTs | IGBTs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $4,07 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Temperatura de unión de funcionamiento | -40C to +175C (industry grade) | — |
| Encapsulado | PG-TO252-3 (DPAK) | — |
| Tipo de montaje | Surface Mount | Through Hole |
| Technology | Trench Field Stop, 7th generation | — |
| Configuration | Single | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Series | — | TRENCHSTOP™ IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | — | 1200 V |
| Current - Collector (Ic) Max | — | 80 A |
| Current - Collector Pulsed (Icm) | — | 160 A |
| Power - Max | — | 483 W |
| Gate Charge (Qg) | — | 185 nC |
| Input Type | — | Standard |
| Operating Temperature (TJ) | — | -40 °C to +175 °C |
| Encapsulado / Carcasa | — | PG-TO247-3-1 (TO-247-3) |
| Packaging | — | Tube |
| Continuous Collector Current (Ic) | — | 40 A (per Infineon product page) |