IGD08N120S7ATMA1 vs IGW40N120H3FKSA1 Comparison
Detailed side-by-side comparison of IGD08N120S7ATMA1 by Infineon and IGW40N120H3FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGD08N120S7ATMA1 | IGW40N120H3FKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | IGBT 7 (S7) Trench Field Stop | — |
| Collector-Emitter Voltage (Vce max) | 1200 V | — |
| Continuous Collector Current (Ic, Tc=25C) | 24 A | — |
| Pulsed Collector Current (Icm) | [DATA_NEEDED: pulsed collector current] | — |
| Total Power Dissipation (Ptot) | 106 W | — |
| Gate-Emitter Voltage (Vge max) | [DATA_NEEDED: Vge max] | — |
| VCE(sat) at rated Ic | 1.65 V | — |
| Co-packaged Diode | Yes (anti-parallel emitter diode) | — |
| Operating Junction Temperature | -40C to +175C (industry grade) | — |
| Package | PG-TO252-3 (DPAK) | — |
| Mounting Type | Surface Mount | Through Hole |
| Technology | Trench Field Stop, 7th generation | — |
| Configuration | Single | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Series | — | TRENCHSTOP™ IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | — | 1200 V |
| Current - Collector (Ic) Max | — | 80 A |
| Current - Collector Pulsed (Icm) | — | 160 A |
| Power - Max | — | 483 W |
| Gate Charge (Qg) | — | 185 nC |
| Input Type | — | Standard |
| Operating Temperature (TJ) | — | -40 °C to +175 °C |
| Package / Case | — | PG-TO247-3-1 (TO-247-3) |
| Packaging | — | Tube |
| Continuous Collector Current (Ic) | — | 40 A (per Infineon product page) |