IGT65R025D2ATMA1 vs IPL60R105P7AUMA1 Comparación
Comparación detallada lado a lado de IGT65R025D2ATMA1 por Infineon y IPL60R105P7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IGT65R025D2ATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,55 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | — |
| Tipo de transistor | N-Channel GaN HEMT, enhancement-mode | — |
| Drain-Source Voltage (Vdss) | 650 V | — |
| Continuous Drain Current (Id, Tc) | 70 A | — |
| Power Dissipation (Pd, Tc) | 236 W | — |
| On-State Resistance (Rds(on)) | 25 mΩ (typical, per MPN suffix) | — |
| Encapsulado | PG-HSOF-8 (source-down, bottom-cooled) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction, typical) | -55C to +150C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | Superjunction (SJ) N-Channel Power MOSFET |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | — |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| Sin halógenos | — | Yes |
| Lead-Free | — | Yes |