IGT65R025D2ATMA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IGT65R025D2ATMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGT65R025D2ATMA1
IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
IGT65R025D2ATMA1 β ActiveInfineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveSpecification Comparison
| Parameter | IGT65R025D2ATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.55 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN Gen2 (G5) | β |
| Transistor Type | N-Channel GaN HEMT, enhancement-mode | β |
| Drain-Source Voltage (Vdss) | 650 V | β |
| Continuous Drain Current (Id, Tc) | 70 A | β |
| Power Dissipation (Pd, Tc) | 236 W | β |
| On-State Resistance (Rds(on)) | 25 mΞ© (typical, per MPN suffix) | β |
| Package | PG-HSOF-8 (source-down, bottom-cooled) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature Range | -55C to +150C (junction, typical) | -55C to +150C |
| Technology | GaN-on-Si, 200 mm wafer, wide-bandgap | Superjunction (SJ) N-Channel Power MOSFET |
| Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss typical value] | β |
| Reverse Recovery Charge (Qrr) | Near-zero (GaN characteristic) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Series | β | CoolMOS P7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| On-Resistance (RDS(on)) max | β | 105 mΞ© |
| Continuous Drain Current (ID) at Tc | β | 33 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | β | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.5 V |
| Gate Charge (Qg) typ | β | 45 nC |
| Channel Type | β | N-Channel |
| Halogen-Free | β | Yes |
| Lead-Free | β | Yes |