IPA60R180P7SXKSA1 vs IPL60R105P7AUMA1 Comparación
Comparación detallada lado a lado de IPA60R180P7SXKSA1 por Infineon y IPL60R105P7AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPA60R180P7SXKSA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc | 18 A | 33 A |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) | — |
| Power Dissipation (PD) at Tc | 26 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Encapsulado | PG-TO220-3-312 (Through-Hole, 3 leads) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Tipo de montaje | Through Hole | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | -55C to +150C |
| Channel Type | N-Channel | N-Channel |
| Configuration | Single | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Sin halógenos | — | Yes |