IPA60R180P7SXKSA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPA60R180P7SXKSA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPA60R180P7SXKSA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc | 18 A | 33 A |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) | β |
| Power Dissipation (PD) at Tc | 26 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Package | PG-TO220-3-312 (Through-Hole, 3 leads) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Channel Type | N-Channel | N-Channel |
| Configuration | Single | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| On-Resistance (RDS(on)) max | β | 105 mΞ© |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | β | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.5 V |
| Gate Charge (Qg) typ | β | 45 nC |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Halogen-Free | β | Yes |