IPB020N08N5ATMA1 vs IPB081N06L3GATMA1 Comparación
Comparación detallada lado a lado de IPB020N08N5ATMA1 por Infineon y IPB081N06L3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB020N08N5ATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,45 | $0,95 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A | 50 A |
| Pulsed Drain Current (IDM) | 480 A | [DATA_NEEDED: pulsed drain current rating] |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | 1.2 V min, 2.1 V typ, 2.6 V max |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | — |
| Encapsulado | PG-TO263-3 (D2PAK-2) | PG-TO263-3 (D2PAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | — |
| Configuration | Single N-channel, 3-pin (2+Tab) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Tipo de transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) at VGS=10V | — | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 79 W |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (junction) |
| Número de pines | — | 3 |
| Pin Configuration | — | Gate / Drain / Source (D2PAK standard) |