IPB020N08N5ATMA1 vs IPT015N10NF2SATMA1 Comparación
Comparación detallada lado a lado de IPB020N08N5ATMA1 por Infineon y IPT015N10NF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPB020N08N5ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,45 | $3,10 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | — |
| Encapsulado | PG-TO263-3 (D2PAK-2) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | — |
| Configuration | Single N-channel, 3-pin (2+Tab) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| Energía de avalancha de pulso único | — | [DATA_NEEDED: EAS value] |