IPB020N08N5ATMA1 vs IPT015N10NF2SATMA1 对比
详细并排对比 IPB020N08N5ATMA1 出自 Infineon 和 IPT015N10NF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB020N08N5ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.45 | $3.10 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| 工作结温 | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | — |
| 封装 | PG-TO263-3 (D2PAK-2) | PG-HSOF-8-10 (9-pin, 8+tab) |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | — |
| Configuration | Single N-channel, 3-pin (2+Tab) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 315 A |
| Continuous Drain Current (ID, Ta) | — | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 1.5 mΩ |
| Gate-Source Threshold (VGS(th)) | — | 3.8 V at 267 µA |
| Total Power Dissipation (Ta) | — | 3.8 W |
| Total Power Dissipation (Tc) | — | 300 W |
| 工作温度范围 | — | -55 °C to +175 °C |
| Gate Drive Voltage (typ) | — | 10 V |
| 单脉冲雪崩能量 | — | [DATA_NEEDED: EAS value] |