IPB024N10N5ATMA1 vs IRF7469TRPBF Comparación
Comparación detallada lado a lado de IPB024N10N5ATMA1 por Infineon y IRF7469TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB024N10N5ATMA1 | IRF7469TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,86 | $0,37 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | IR MOSFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | 15 nC |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | -55°C to +150°C (Tj) |
| Encapsulado | PG-TO263-7 (D2PAK-7) | 8-SO (SOIC-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (unlimited floor life at <30C/85% RH) | 1 (unlimited) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Sin halógenos | Yes (per Infineon product family policy) | Yes |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) at TA=25°C | — | 9 A |
| Rds(on) Max at Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) Max | — | ±20 V |
| Power Dissipation (Pd) at TA=25°C | — | 2.5 W |
| Lead-Free | — | Yes |
| Channel Mode | — | Enhancement |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |