IPB024N10N5ATMA1 vs IRF7469TRPBF Comparaison
Comparaison détaillée côte à côte de IPB024N10N5ATMA1 par Infineon et IRF7469TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IPB024N10N5ATMA1 | IRF7469TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,86 | $0,37 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | IR MOSFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | 15 nC |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Plage de température de fonctionnement | -55C to +175C (junction) | -55°C to +150°C (Tj) |
| Boîtier | PG-TO263-7 (D2PAK-7) | 8-SO (SOIC-8) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (unlimited floor life at <30C/85% RH) | 1 (unlimited) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Sans halogène | Yes (per Infineon product family policy) | Yes |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) at TA=25°C | — | 9 A |
| Rds(on) Max at Vgs=10V | — | 17 mΩ |
| Gate-Source Voltage (Vgs) Max | — | ±20 V |
| Power Dissipation (Pd) at TA=25°C | — | 2.5 W |
| Lead-Free | — | Yes |
| Channel Mode | — | Enhancement |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |