IPB037N06N3GATMA1 vs IPB100N04S4H2ATMA1 Comparación
Comparación detallada lado a lado de IPB037N06N3GATMA1 por Infineon y IPB100N04S4H2ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ ActivoInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB037N06N3GATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,41 | $1,42 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | OptiMOS-T2 (trench gate) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | — |
| Encapsulado / Carcasa | PG-TO263-3 (D2PAK, surface mount) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 (unlimited) | MSL1 (up to 260C peak reflow) |
| Drain Tab Connection | Tab electrically tied to drain | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Encapsulado | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant (Green Product) |