IPB037N06N3GATMA1 vs IPB100N04S4H2ATMA1 Comparison
Detailed side-by-side comparison of IPB037N06N3GATMA1 by Infineon and IPB100N04S4H2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 β ActiveInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveSpecification Comparison
| Parameter | IPB037N06N3GATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.41 | $1.42 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPB037N06N3GATMA1 | β |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | OptiMOS-T2 (trench gate) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Pd) at Tc | 188 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Package / Case | PG-TO263-3 (D2PAK, surface mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (unlimited) | MSL1 (up to 260C peak reflow) |
| Drain Tab Connection | Tab electrically tied to drain | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| RDS(on) at VGS=10V | β | 2.4 mΞ© typical |
| Maximum Power Dissition (PD) at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +175C |
| Storage Temperature | β | [DATA_NEEDED: storage temp range] |
| Package | β | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Avalanche Energy (EAS) | β | 100% avalanche tested |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant (Green Product) |