IPB107N20N3GATMA1 vs BSC123N08NS3GATMA1 Comparación
Comparación detallada lado a lado de IPB107N20N3GATMA1 por Infineon y BSC123N08NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB107N20N3GATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $0,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 88 A | — |
| Maximum Power Dissipation (Pd) at Tc | 300 W | — |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: VGS(th) value] |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max and operating range] | — |
| Encapsulado | PG-TO263-3 (D2PAK) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Drain, Source, Gate) + Tab | — |
| Estado RoHS | Compliant | Compliant with exemption |
| Technology | OptiMOS 3 trench MOSFET | — |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | — | Yes (AEC-Q101) |