IPB180P04P4L02ATMA2 vs IPD30N08S2L21ATMA1 Comparación
Comparación detallada lado a lado de IPB180P04P4L02ATMA2 por Infineon y IPD30N08S2L21ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ ActivoInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB180P04P4L02ATMA2 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-P2 | OptiMOS |
| Tipo de transistor | P-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | -55C to +175C |
| Encapsulado | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-11 (DPAK-2) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 7 (6 + tab) | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Estado RoHS | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | — |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Maximum Junction Temperature | — | +175C |