IPB35N10S3L26ATMA2 vs IPD50N04S408ATMA1 Comparación
Comparación detallada lado a lado de IPB35N10S3L26ATMA2 por Infineon y IPD50N04S408ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPB35N10S3L26ATMA2 | IPD50N04S408ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | OptiMOS-T2 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| Corriente de drenador pulsada | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| Encapsulado | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 °C to +175 °C |
| Número de pines | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Estado RoHS | Compliant | — |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Nivel MSL | — | MSL1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % Avalanche tested |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |