IPB60R040CFD7ATMA1 vs IPB037N06N3GATMA1 Comparación
Comparación detallada lado a lado de IPB60R040CFD7ATMA1 por Infineon y IPB037N06N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActivoInfineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPB60R040CFD7ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,19 | $1,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Disipación de potencia (TC=25°C) | 227 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | -55 C to +175 C (junction) |
| Encapsulado | PG-TO263-3-2 (D2PAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Nivel MSL | 1 | 1 (unlimited) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Part Number | — | IPB037N06N3GATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) Max | — | 3.7 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 3.5 V |
| Total Power Dissipation (Pd) at Tc | — | 188 W |
| Encapsulado / Carcasa | — | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: gate charge value] |
| Drain Tab Connection | — | Tab electrically tied to drain |