IPC100N04S51R7ATMA1 vs IPD053N06NATMA1 Comparación
Comparación detallada lado a lado de IPC100N04S51R7ATMA1 por Infineon y IPD053N06NATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPC100N04S51R7ATMA1 | IPD053N06NATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-34 (SS08 leadless) | PG-TO252-3 (DPAK-2), Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (260 °C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Product Series | — | OptiMOS 5 60V |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Continuous Drain Current (ID, Tc) | — | 45 A |
| Continuous Drain Current (ID, Ta) | — | 18 A |
| On-State Resistance (RDS(on), max) | — | 5.3 mOhm @ VGS=10V |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] |
| Technology | — | OptiMOS 5 trench MOSFET |