IPC100N04S51R7ATMA1 vs IPD053N06NATMA1 Comparaison
Comparaison détaillée côte à côte de IPC100N04S51R7ATMA1 par Infineon et IPD053N06NATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IPC100N04S51R7ATMA1 | IPD053N06NATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $0,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| Type de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | — |
| Boîtier | PG-TDSON-8-34 (SS08 leadless) | PG-TO252-3 (DPAK-2), Surface Mount |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (260 °C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| Statut RoHS | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Product Series | — | OptiMOS 5 60V |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Continuous Drain Current (ID, Tc) | — | 45 A |
| Continuous Drain Current (ID, Ta) | — | 18 A |
| On-State Resistance (RDS(on), max) | — | 5.3 mOhm @ VGS=10V |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Plage de température de fonctionnement | — | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] |
| Technology | — | OptiMOS 5 trench MOSFET |