IPC100N04S5L1R5ATMA1 vs IAUC120N06S5L015ATMA1 Comparación
Comparación detallada lado a lado de IPC100N04S5L1R5ATMA1 por Infineon y IAUC120N06S5L015ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ ActivoInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC100N04S5L1R5ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $0,92 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +175C (Tj) |
| Encapsulado | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-43 (Surface Mount) |
| Tipo de montaje | Surface Mount | Surface Mount (exposed pad) |
| Nivel MSL | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL level] |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Technology | — | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |