IPC100N04S5L1R5ATMA1 vs IAUC120N06S5L015ATMA1 Vergleich

Detaillierter Direktvergleich von IPC100N04S5L1R5ATMA1 von Infineon und IAUC120N06S5L015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktiv
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IPC100N04S5L1R5ATMA1 IAUC120N06S5L015ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,18 $0,92
Manufacturer Infineon Technologies —
Product Family OptiMOS-5 40 V —
Polarity / Channel Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) Max 40 V —
Gate-Source Voltage (VGS) Max 20 V —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 115 W —
On-Resistance RDS(on) at VGS=10 V 1.5 mOhm (typ) —
On-Resistance RDS(on) at VGS=4.5 V 1.8 mOhm (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
Betriebstemperaturbereich -55C to +175C -55C to +175C (Tj)
Gehäuse PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-43 (Surface Mount)
Montageart Surface Mount Surface Mount (exposed pad)
MSL-Level MSL1 (260C peak reflow) [DATA_NEEDED: MSL level]
AEC-Q101 Qualified Yes —
RoHS-Status Compliant (Green Product) Compliant
Avalanche Tested 100% —
Technology — N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

Datenblätter & Ressourcen

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