IPC90N04S5L3R3ATMA1 vs IPD068P03L3GATMA1 Comparación
Comparación detallada lado a lado de IPC90N04S5L3R3ATMA1 por Infineon y IPD068P03L3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPC90N04S5L3R3ATMA1 | IPD068P03L3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,96 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | OptiMOS P-Channel Power MOSFET |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Encapsulado | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (V_DS) | — | -30 V |
| Continuous Drain Current (I_D) at T_C | — | -70 A |
| Pulsed Drain Current (I_D,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at T_C | — | 100 W |
| R_DS(on) max at V_GS=-10V | — | 0.005 ohm (typical) |
| Gate-Source Threshold Voltage (V_GS(th)) | — | -1.0 V to -2.2 V |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Rango de temperatura de funcionamiento | — | -55C to +175C (junction) |
| Channel Mode | — | Enhancement |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | 1 (unlimited floor life at <30C/85% RH) |
| Technology | — | Trench MOSFET (OptiMOS) |