IPC90N04S5L3R3ATMA1 vs IPD068P03L3GATMA1 비교
다음의 상세 나란히 비교: IPC90N04S5L3R3ATMA1 제조: Infineon 및 IPD068P03L3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPC90N04S5L3R3ATMA1 | IPD068P03L3GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.96 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | OptiMOS P-Channel Power MOSFET |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| 패키지 | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3 (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (V_DS) | — | -30 V |
| Continuous Drain Current (I_D) at T_C | — | -70 A |
| Pulsed Drain Current (I_D,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at T_C | — | 100 W |
| R_DS(on) max at V_GS=-10V | — | 0.005 ohm (typical) |
| Gate-Source Threshold Voltage (V_GS(th)) | — | -1.0 V to -2.2 V |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| 동작 온도 범위 | — | -55C to +175C (junction) |
| Channel Mode | — | Enhancement |
| RoHS 상태 | — | Compliant |
| MSL 레벨 | — | 1 (unlimited floor life at <30C/85% RH) |
| Technology | — | Trench MOSFET (OptiMOS) |