IPD046N08N5ATMA1 vs IPB027N10N3GATMA1 Comparación
Comparación detallada lado a lado de IPD046N08N5ATMA1 por Infineon y IPB027N10N3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD046N08N5ATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 80V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| Rango de temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Estado RoHS | ROHS3 Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: moisture sensitivity level] |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (TJ) |
| Encapsulado | — | PG-TO263-3 (D2PAK) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |