IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon
N.º de pieza: IPD046N08N5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.18 | $118,00 |
| 500 | $0.92 | $460,00 |
| 1.000 | $0.78 | $780,00 |
IPD046N08N5ATMA1 Descripción general
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages with fast switching speeds. Power MOSFETs sit within the discrete semiconductor taxonomy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. They are foundational building blocks in switched-mode power supplies (SMPS), motor drives, and DC-DC converters, where they act as the high-side or low-side switching element. Within the MOSFET family, OptiMOS 5 represents a state-of-the-art 80V trench technology optimized for synchronous rectification.
The IPD046N08N5ATMA1 features an extremely low RDS(on) of 4.6 mΩ maximum at VGS = 10 V, dramatically reducing conduction losses in high-current loops. The OptiMOS 5 process technology achieves this low on-resistance while simultaneously reducing gate charge (Qg) and output capacitance (Coss), which translates into lower switching losses and higher efficiency at elevated switching frequencies. The device is rated for an operating junction temperature range of -55 °C to +175 °C and is fully RoHS compliant (lead-free, halogen-free depending on date code).
Architecturally, the OptiMOS 5 cell uses an advanced shielded-gate trench structure that minimizes the Miller plateau charge and enhances avalanche ruggedness. For telecom 48 V bus converters, this combination of low RDS(on) and low Qg enables designers to push switching frequencies higher, shrinking magnetic components and increasing power density. The DPAK (TO-252) package offers a low thermal resistance path through its drain tab, suitable for both PCB-mount and clip-mount heatsink attachment.
Typical applications include synchronous rectification in 48 V telecom and server PSU outputs, high-current DC-DC buck and buck-boost converters, motor drive H-bridges and half-bridges, hot-swap and OR-ing controllers, battery management and protection circuits, and industrial switched-mode power supplies. The 80 V rating provides comfortable headroom for 48 V nominal rails.
When designing with this MOSFET, ensure the gate-drive voltage is at least 10 V to achieve full RDS(on) performance; 6 V operation will significantly increase conduction losses. Thermal management is critical — at 90 A the device can dissipate substantial power, so the PCB copper pour under the DPAK tab must be sized to keep Tj below 150 °C. For hard-switching topologies, verify SOA (safe operating area) against your worst-case dv/dt and load-line conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para IPD046N08N5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPD046N08N5ATMA1 (mismo factor de forma y huella) — difiere en Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS) Max, MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPB057N08N5ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPD050N08N5ATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPD78CN10NGATMA1
✅ Sustitución directa✓ En stock
$0.78 / unidad
Ver hoja de datos →IPB027N10N3GATMA1
✅ Sustitución directa✓ En stock
$1.62 / unidad
Ver hoja de datos →BSC0502NSIATMA1
✅ Sustitución directa✓ En stock
$0.85 / unidad
Ver hoja de datos →IAUC60N06S5L073ATMA1
✅ Sustitución directa✓ En stock
$0.41 / unidad
Ver hoja de datos →ISC016N08NM8ATMA1
✅ Sustitución directa✓ En stock
$1.02 / unidad
Ver hoja de datos →IPD046N08N5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Power Dissipation (PD) at Tc=25°C | 125 W |
| Rango de temperatura de unión de funcionamiento | -55 °C to +175 °C |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Tipo de montaje | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET |
| Estado RoHS | ROHS3 Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) |
Configuración de pines de IPD046N08N5ATMA1
| Pin 1 | Gate (G) — Gate drive input; connect to gate driver output through gate resistor |
| Pin 2 | Drain (D) / Tab — Drain connection and primary thermal pad; solder to PCB copper pour |
| Pin 3 | Source (S) — Source return; connect to ground (low-side) or load return |
Área de funcionamiento seguro - IPD046N08N5ATMA1
Aplicaciones típicas
IPD046N08N5ATMA1 es adecuado para 6 aplicacións: 48V Telecom Synchronous Rectification, High-Current DC-DC Buck Converters, Motor Drive Half-Bridge and H-Bridge, Hot-Swap and OR-ing Controllers, Industrial SMPS Primary Switch, Battery Management and Protection.
48V Telecom Synchronous Rectification
The IPD046N08N5ATMA1 is engineered for synchronous rectification in 48V telecom and server power supplies, where its 4.6 mΩ RDS(on) and 80V rating minimize conduction losses on the secondary side of isolated DC-DC converters. Placed as the low-side FET in a half-bridge synchronous rectifier, it directly replaces Schottky diodes to gain 3-5% system efficiency at 48V-to-POL conversion stages. The OptiMOS 5 platform's low Qg (typical 30-50 nC) enables switching frequencies of 200-500 kHz while keeping driver losses manageable, allowing smaller magnetics in 1U/2U server PSU form factors.
Recomendado
High-Current DC-DC Buck Converters
In high-current buck converters delivering 30A to 60A at point-of-load, the IPD046N08N5ATMA1 serves as the synchronous low-side switch, where its 4.6 mΩ RDS(on) keeps synchronous rectification losses under 1% even at full load. With VDS max of 80V, it can be used on 48V intermediate buses with full margin against transients, while the DPAK package enables single-sided PCB cooling through the drain tab. Compared to older OptiMOS 3 generations, the OptiMOS 5 cell halves the Qoss, reducing dead-time losses and improving light-load efficiency.
Recomendado
Motor Drive Half-Bridge and H-Bridge
For motor drive H-bridges operating on 24V to 48V DC bus voltage, the IPD046N08N5ATMA1 provides the low RDS(on) needed for high-current PWM switching without excessive heating. Each phase leg uses two such MOSFETs, and the 90A continuous rating comfortably handles motor inrush currents during acceleration while the 125W power dissipation allows sustained operation at lower duty cycles. The DPAK package simplifies PCB layout and provides a robust mechanical attachment in vibration-prone industrial environments.
Recomendado
Hot-Swap and OR-ing Controllers
In 48V hot-swap and OR-ing applications, the IPD046N08N5ATMA1 acts as the load-switch element, where its 4.6 mΩ RDS(on) minimizes steady-state voltage drop and its 80V rating provides margin for transients on plug-in events. The MOSFET's avalanche rating and linear-mode operation capability let it absorb the energy of inrush transients during board insertion. Designers typically parallel two devices for higher current or use a single device for 30-40A hot-swap circuits in server and telecom blade applications.
Recomendado
Industrial SMPS Primary Switch
For industrial switched-mode power supplies with 24V to 48V input rails, the IPD046N08N5ATMA1 can serve as the main switching element in flyback, forward, or half-bridge topologies. Its 80V VDS rating accommodates reflected voltages in 48V-input flyback designs, while the 4.6 mΩ RDS(on) keeps primary-side conduction losses manageable at 5-10A continuous output. The OptiMOS 5 process also reduces switching losses, enabling higher frequency operation that shrinks transformer and output filter sizes.
Recomendado
Battery Management and Protection
In battery management systems for 48V battery packs (eMobility, energy storage, UPS), the IPD046N08N5ATMA1 provides the disconnect switch function, where its 4.6 mΩ RDS(on) keeps continuous conduction losses below 1W even at 15A continuous discharge. The 80V rating easily handles the maximum stack voltage of a 13-14S Li-ion pack with margin. Its low thermal resistance allows sustained operation at high currents with minimal heatsinking, and the DPAK footprint enables compact protection circuit layouts.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPD046N08N5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPB057N08N5ATMA1 | IPD050N08N5ATMA1 | IPD78CN10NGATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TDSON-8 |
| VDS Max (V) | 80 V | 80 V | 80 V | 100 V | 80 V |
| RDS(on) Max (mΩ) at VGS=10V | 4.6 mΩ | 5.7 mΩ | 5.0 mΩ | 7.8 mΩ | 1.6 mΩ |
| Continuous Drain Current (A) at Tc=25°C | 90 A | 80 A | 85 A | 55 A | 100 A |
| Technology Generation | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 100V | OptiMOS 8 80V |
| RoHS Compliance | Yes (ROHS3) | Yes | Yes | Yes | Yes |
| Automotive Qualified (AEC-Q101) | No (industrial grade) | No | No | No | No |
Diferenciadores clave
- Industry-leading figure-of-merit (FOM) at 80V in DPAK package (frente a IPD78CN10NGATMA1)
- Lower RDS(on) than earlier-generation OptiMOS 3 parts (frente a IPB027N10N3GATMA1)
- Newer OptiMOS 8 generation available as drop-in upgrade path (frente a ISC016N08NM8ATMA1)
Notas de diseño
At full 90 A load with 5 V drop across the FET, power dissipation is approximately 4.5 W. The DPAK package thermal resistance (RθJA, mounted on 1 oz copper 1 sq-inch pad) is approximately 40-50 °C/W, yielding a junction temperature rise of 180-225 °C above ambient - exceeding the 175 °C Tj max. Practical PCB designs must use at least 2-3 sq-inches of copper pour, multi-layer inner copper, or attach an external heatsink/clip to keep Tj below 150 °C at full load. Estimated with 1 oz copper pour, 25 °C ambient.
Use a Kelvin source connection where possible by routing the gate-drive return directly to the Source pin (pin 3), not to the power ground copper. This prevents source inductance from creating a negative feedback that slows switching and causes oscillation. Place the gate-drive resistor as close as possible to the gate pin. The drain tab requires a thermal via array (typically 9-16 vias of 0.3 mm diameter) under the drain pad to conduct heat into inner copper layers.
Driving the gate at less than 8 V will dramatically increase RDS(on) and may push the part outside its SOA. Use a dedicated gate driver (not a logic-level GPIO pin) capable of sourcing/sinking at least 1 A peak. Do not exceed VGS of ±20 V absolute maximum - typical 12 V gate drive is safe. Verify dv/dt immunity if the part is used in a half-bridge; otherwise a gate-source resistor of 10-100 kΩ may be needed to prevent Miller-induced turn-on.
Información de cumplimiento
ROHS3 compliant per Infineon product page. Industrial grade, not AEC-Q100/101 qualified. Lead-free (Pb-free) reflow compatible per JEDEC J-STD-020. Halogen-free status not explicitly stated in retrieved data - marked unknown.
