IPD053N06NATMA1 vs IPD50N06S409ATMA2 Comparación
Comparación detallada lado a lado de IPD053N06NATMA1 por Infineon y IPD50N06S409ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD053N06NATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 5 60V | — |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Continuous Drain Current (ID, Tc) | 45 A | — |
| Continuous Drain Current (ID, Ta) | 18 A | — |
| On-State Resistance (RDS(on), max) | 5.3 mOhm @ VGS=10V | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Encapsulado | PG-TO252-3 (DPAK-2), Surface Mount | PG-TO252-3-11 (DPAK) |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Technology | OptiMOS 5 trench MOSFET | N-Channel MOSFET (OptiMOS) |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Recuento de pines | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |