IPD053N06NATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPD053N06NATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveSpecification Comparison
| Parameter | IPD053N06NATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Product Series | OptiMOS 5 60V | β |
| Transistor Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | +/- 20 V | β |
| Continuous Drain Current (ID, Tc) | 45 A | β |
| Continuous Drain Current (ID, Ta) | 18 A | β |
| On-State Resistance (RDS(on), max) | 5.3 mOhm @ VGS=10V | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TO252-3 (DPAK-2), Surface Mount | PG-TO252-3-11 (DPAK) |
| Operating Temperature Range | -55C to +175C (Tj) [DATA_NEEDED: precise operating range min/max from datasheet] | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 5 trench MOSFET | N-Channel MOSFET (OptiMOS) |
| Continuous Drain Current (ID) at Tc | β | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | β | 9 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Pin Count | β | 3 (2 + Tab) |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free / Halogen-Free | β | [DATA_NEEDED] |