IPD135N03LGATMA1 vs IRFR120NTRPBF Comparación
Comparación detallada lado a lado de IPD135N03LGATMA1 por Infineon y IRFR120NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD135N03LGATMA1 | IRFR120NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,22 | $0,26 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 30 A (Tc) | — |
| Power Dissipation (PD) | 31 W (Tc) | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK), Surface Mount | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Gate Charge (Qg) | Ultra-low (per OptiMOS™ family spec) | — |
| Output Charge (Qoss) | Ultra-low (per OptiMOS™ family spec) | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ max typical for OptiMOS) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | — |
| Lead-Free Finish | Yes | — |
| Qualification | Industrial (Infineon OptiMOS™ standard grade) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | — | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | — | 16.7 nC |
| Gate-to-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Rango de temperatura de unión de funcionamiento | — | -55C to +175C |
| Encapsulado | — | TO-252AA (DPAK) |
| Channel Type | — | N-Channel Enhancement Mode |
| Technology | — | HEXFET (IR MOSFET fifth generation) |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | — | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |