IPD135N03LGATMA1 vs IRFR120NTRPBF Comparison
Detailed side-by-side comparison of IPD135N03LGATMA1 by Infineon and IRFR120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD135N03LGATMA1 | IRFR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.26 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) | 30 A (Tc) | β |
| Power Dissipation (PD) | 31 W (Tc) | β |
| Package / Case | PG-TO252-3 (DPAK), Surface Mount | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Gate Charge (Qg) | Ultra-low (per OptiMOSβ’ family spec) | β |
| Output Charge (Qoss) | Ultra-low (per OptiMOSβ’ family spec) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max typical for OptiMOS) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | β |
| Lead-Free Finish | Yes | β |
| Qualification | Industrial (Infineon OptiMOSβ’ standard grade) | β |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | β | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | β | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | β | 16.7 nC |
| Gate-to-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: Crss] |
| Operating Junction Temperature Range | β | -55C to +175C |
| Package | β | TO-252AA (DPAK) |
| Channel Type | β | N-Channel Enhancement Mode |
| Technology | β | HEXFET (IR MOSFET fifth generation) |
| Avalanche Energy Rating (EAS) | β | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | β | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | β | Lead-Free, RoHS Compliant |