IPD50N03S4L06ATMA1 vs IPD031N03LGATMA1 Comparación
Comparación detallada lado a lado de IPD50N03S4L06ATMA1 por Infineon y IPD031N03LGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD50N03S4L06ATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,49 | $0,41 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | — |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | — |
| Input Capacitance (C_iss) | 2.33 nF | — |
| Output Capacitance (C_oss) | 600 pF | — |
| Reverse Transfer Capacitance (C_rss) | 34 pF | — |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-11 (DPAK-2) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (up to 260 C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Estado RoHS | Compliant (Green Package) | Compliant |
| Technology | — | MOSFET (Metal Oxide), OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ 25 °C | — | 90 A (Tc) |
| Power Dissipation (Pd) | — | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | — | 3.1 mΩ |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | — | Ultra low (per datasheet tagline) |
| Temperatura de funcionamiento | — | -55 °C to +175 °C (junction) |
| Mounting Tab | — | Drain (electrically connected) |
| Avalanche Energy Rated | — | Yes (per OptiMOS 3 datasheet family) |