IPD50N03S4L06ATMA1 vs IPD031N03LGATMA1 Comparison
Detailed side-by-side comparison of IPD50N03S4L06ATMA1 by Infineon and IPD031N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N03S4L06ATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.41 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (V_DS) | 30 V | β |
| Continuous Drain Current (I_D, Tc) | 50 A | β |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | β |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | β |
| Input Capacitance (C_iss) | 2.33 nF | β |
| Output Capacitance (C_oss) | 600 pF | β |
| Reverse Transfer Capacitance (C_rss) | 34 pF | β |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260 C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS Status | Compliant (Green Package) | Compliant |
| Technology | β | MOSFET (Metal Oxide), OptiMOS 3 |
| Drain-to-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ 25 Β°C | β | 90 A (Tc) |
| Power Dissipation (Pd) | β | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | β | 3.1 mΞ© |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 4.5 V, 10 V |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | β | Ultra low (per datasheet tagline) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (junction) |
| Mounting Tab | β | Drain (electrically connected) |
| Avalanche Energy Rated | β | Yes (per OptiMOS 3 datasheet family) |