IPD60R380C6ATMA1 vs IPD50R380CEAUMA1 Comparación
Comparación detallada lado a lado de IPD60R380C6ATMA1 por Infineon y IPD50R380CEAUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD60R380C6ATMA1 | IPD50R380CEAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,41 | $0,34 |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | CoolMOS CE (super-junction) |
| FET Type | N-Channel | — |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Estado RoHS | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 500 V |
| Continuous Drain Current (Id) at Tc=25C | — | 14.1 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 380 mΩ |
| Total Power Dissipation (Ptot) at Tc=25C | — | 98 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Channel Type | — | N-Channel |
| AEC-Q101 Automotive | — | Not qualified (CE variant; use CE-A for automotive) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL level] |