IPD60R380C6ATMA1 vs IPD50R380CEAUMA1 比較

詳細な並列比較: IPD60R380C6ATMA1 メーカー: Infineon および IPD50R380CEAUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 ✓ 生産中

仕様比較

パラメータ IPD60R380C6ATMA1 IPD50R380CEAUMA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.41 $0.34
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS CE (super-junction)
FET Type N-Channel —
パッケージ PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
実装タイプ Surface Mount Surface Mount
MSLレベル [DATA_NEEDED: MSL level] —
RoHS ステータス Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Drain-Source Voltage (V(BR)DSS) — 500 V
Continuous Drain Current (Id) at Tc=25C — 14.1 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm]
On-State Resistance (RDS(on)) max at VGS=10V — 380 mΩ
Total Power Dissipation (Ptot) at Tc=25C — 98 W
動作接合温度 — -55C to +150C
Channel Type — N-Channel
AEC-Q101 Automotive — Not qualified (CE variant; use CE-A for automotive)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL level]

データシート&リソース

すべての製品を閲覧 BOMを作成 見積もり依頼