IPD60R385CPATMA1 vs IPD60R380C6ATMA1 Comparación
Comparación detallada lado a lado de IPD60R385CPATMA1 por Infineon y IPD60R380C6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD60R385CPATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,41 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CP (5th generation) | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | — |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Temperatura de unión de funcionamiento | -55 °C to +150 °C | — |
| Encapsulado / Carcasa | PG-TO252-3 (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source; tab = Drain) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Technology | — | CoolMOS C6 Superjunction |
| Encapsulado | — | PG-TO252-3 (DPAK) |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |