IPD60R385CPATMA1 vs IPD60R380C6ATMA1 Comparison

Detailed side-by-side comparison of IPD60R385CPATMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R385CPATMA1 IPD60R380C6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.41
Manufacturer Infineon Technologies
Series CoolMOS™ CP (5th generation)
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A
Power Dissipation (PD) at TC=25°C 83 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: gate threshold voltage]
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C
Package / Case PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source; tab = Drain)
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) at TC=25C 10.6 A
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25C 83 W
Operating Junction Temperature (TJ) -55C to +150C
Storage Temperature [DATA_NEEDED: storage temperature]
Technology CoolMOS C6 Superjunction
Package PG-TO252-3 (DPAK)
Drain-Tab Connection Exposed pad (electrically connected to drain)

Datasheets & Resources

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