IPD65R380E6ATMA1 vs IPD60R360P7SAUMA1 Comparación
Comparación detallada lado a lado de IPD65R380E6ATMA1 por Infineon y IPD60R360P7SAUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD65R380E6ATMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | CoolMOS P7 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55C to +150C (junction) |
| Encapsulado | PG-TO252-3 (DPAK), surface mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Encapsulado / Carcasa | — | PG-TO252-3 (DPAK) |
| Número de pines | — | 3 |
| Channel Type | — | N-Channel |