IPD80R600P7ATMA1 vs IPD80R2K4P7ATMA1 Comparación
Comparación detallada lado a lado de IPD80R600P7ATMA1 por Infineon y IPD80R2K4P7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD80R2K4P7ATMA1 - 800V CoolMOS P7 2.5A N-Channel MOSFET | Infineon
IPD80R2K4P7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD80R600P7ATMA1 | IPD80R2K4P7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $1,05 |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | — |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C | -55C to +150C (junction) |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | MOSFET (Metal Oxide), Superjunction |
| Polarity | N-Channel | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Part Number | — | IPD80R2K4P7ATMA1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 800 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 2.5 A |
| Power Dissipation (Pd) @ Tc=25C | — | 22 W |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2000 mOhm |
| Gate Drive Voltage (typ) | — | 10 V |
| Pins | — | 3 (2 + Tab) |
| Configuration | — | Single |
| Part Status | — | Active |