IPD90N03S4L02ATMA1 vs BSC014N06NSATMA1 Comparación
Comparación detallada lado a lado de IPD90N03S4L02ATMA1 por Infineon y BSC014N06NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPD90N03S4L02ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,89 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 5 (shielded-gate trench) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | 100 A |
| Power Dissipation (PD) at Tc | 136 W | — |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | — |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | — |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Encapsulado | PG-TO252-3-11 (DPAK, surface mount) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 |
| Estado RoHS | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Series | OptiMOS-T2 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |