IPD90N10S406ATMA1 vs BSC076N04NDATMA1 Comparación
Comparación detallada lado a lado de IPD90N10S406ATMA1 por Infineon y BSC076N04NDATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD90N10S406ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 C to +175 C |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Encapsulado / Carcasa | PG-TO252-3-313 (DPAK) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 (Gate, Drain, Source) | — |
| Nivel MSL | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Technology | — | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |