IPD90N10S406ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPD90N10S406ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPD90N10S406ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | β |
| Family / Series | OptiMOS | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 90 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 136 W | β |
| Gate Drive Level | Normal Level (10 V typical Vgs) | β |
| Avalanche Energy Rating (EAS) | 250 mJ | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Storage Temperature Range | -55 Β°C to +175 Β°C | β |
| Package / Case | PG-TO252-3-313 (DPAK) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 (Gate, Drain, Source) | β |
| MSL Level | MSL1 (260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Built-in Body Diode | Yes (single with built-in diode) | β |
| Avalanche Tested | 100% Avalanche tested | β |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |