IPG20N06S2L65ATMA1 vs IPG20N06S2L65AATMA1 Comparación
Comparación detallada lado a lado de IPG20N06S2L65ATMA1 por Infineon y IPG20N06S2L65AATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPG20N06S2L65ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $0,78 |
| FET Type | Dual N-Channel, Logic Level | Dual N-Channel (Half Bridge / Independent) |
| Technology | OptiMOS-T2 (Planar Trench 55V) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A per channel | 20 A (per channel) |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C | — |
| Encapsulado | PG-TDSON-8-4 (TDSON-8 EP) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (260°C peak reflow) | MSL1 (peak reflow 260 C) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Temperatura de funcionamiento | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Estado RoHS | — | Compliant (Green Product) |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |