IPG20N10S4L35ATMA1 vs BSC027N06LS5ATMA1 Comparación
Comparación detallada lado a lado de IPG20N10S4L35ATMA1 por Infineon y BSC027N06LS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPG20N10S4L35ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,66 | $0,66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | N-Channel |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Temperatura de funcionamiento | 175°C max junction | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado / Carcasa | PG-TDSON-8-4 (8-Pin TDSON EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Automotive Qualification | AEC-Q101 | — |
| Nivel MSL | MSL1 (up to 260°C peak reflow) | — |
| Series | OptiMOS™, Automotive | OptiMOS™ 5 |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Avalanche Rated | 100% Avalanche Tested | — |
| Part Status | — | Active |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| Rango de temperatura de funcionamiento | — | -55°C to +150°C |
| Recuento de pines | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |